Combinatorial low-pressure chemical vapor deposition of high-k strontium-doped hafnium dioxides

CHED 1150

Jonathan W. Hennek, jwhennek@stthomas.edu, Department of Chemistry, University of St. Thomas, 2115 Summit Ave., St. Paul, MN 55105 and Wayne L. Gladfelter, gladfelt@chem.umn.edu, Department of Chemistry, University of Minnesota, 207 Pleasant Street SE, Minneapolis, MN 55455.

Previously characterized liquid strontium precursor (1) was used along with Hf(OtBu)4 (2) to deposit thin oxide films with variable strontium / hafnium concentrations in a cold-wall, combinatorial low-pressure chemical vapor deposition (LPCVD) reactor.  Simultaneous delivery and decomposition of both precursors on a single-crystal silicon substrate heated to 500 ūC yielded mixed SrO / HfO2 materials exhibiting a variety of crystalline phases.  A desired cubic hafnia phase, which possesses a high dielectric constant, was found in regions of low Sr concentration (² 15%).  Regions of high Sr content showed evidence of SrHfO3 and SrCO3.  LPCVD reactor schematics and characterization techniques will be discussed.

 

Undergraduate Research Poster Session: Inorganic Chemistry
2:00 PM-4:00 PM, Monday, April 7, 2008 Morial Convention Center -- Hall A, Poster

Division of Chemical Education

The 235th ACS National Meeting, New Orleans, LA, April 6-10, 2008