Chemical methods for the hydrogen termination of silicon dangling bonds

PHYS 460

Jason L. Pitters, jason.pitters@nrc-cnrc.gc.ca1, Iana A. Dogel, iana.dogel@gmail.com1, Stanislav A. Dogel, sdogel@phys.ualberta.ca2, Gino A. DiLabio, Gino.DiLabio@nrc.ca1, and Robert A. Wolkow, rwolkow@ualberta.ca2. (1) National Institute for Nanotechnology, National Research Council of Canada, 11421 Saskatchewan Drive, Edmonton, AB T6G 2M8, Canada, (2) Department of Physics, University of Alberta, Edmonton, AB, Canada
Highly ordered hydrogen-terminated silicon surfaces are ideal testing grounds for molecular electronics. However, upon formation of these surfaces it is inevitable that some surface sites are not capped by hydrogen. These remaining dangling bonds can interfere with the chemical and electronic properties of nanostructures formed on the silicon surface. In this work scanning tunneling microscopy, high resolution electron energy loss spectroscopy and ab initio computational methods are used to explore chemical approaches to refining the hydrogen termination process. We investigate the utility of diimide (N2H2) and N,N-Diethylhydroxylamine (DEHA) as hydrogen atom sources that have the ability to cap silicon surface dangling bonds.
 

PHYS Poster Session - Nanostructured Materials and Nanophotonics
7:30 PM-10:00 PM, Wednesday, April 9, 2008 Morial Convention Center -- Hall A, Poster

Division of Physical Chemistry

The 235th ACS National Meeting, New Orleans, LA, April 6-10, 2008