Surface modification strategy for controlling the self-assembly of PS-b-PMMA in thin films

ANYL 183

Eungnak Han, Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, Paul F. Nealey, nealey@engr.wisc.edu, Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, and Padma Gopalan, pgopalan@wisc.edu, Department of Materials Science and Engineering, University of Wisconsin at Madison, Madison, WI 53706.
We present a simple and efficient strategy towards surface modification for controlling the self-assembly of P(styrene-b-methylmethacrylate) diblock copolymer (BCP) in thin films. Photo-patternable, substrate-independent neutral surface were created to achieve vertical orientation of block copolymer (BCP) microdomains. Photo-crosslinking reaction of epoxy groups routinely used in conventional photolithography was exploited to formulate neutral surfaces. A random copolymer of styrene (f~0.58-0.63), methylmethacrylate (f~0.41-0.46) and photo-crosslinkable glycidyl methacrylate (f~0.01-0.02) was synthesized. The ultra-thin (2-6 nm) crosslinked film was created as a neutral interfacial layer between the block copolymer and the substrate. The composition of the copolymer was fine tuned to tailor the wetting behavior and hence the domain orientation (parallel or perpendicular to the substrate) in the top self-assembled block copolymer film. The effectiveness of the new neutral polymer on a range of substrates such as glass and gold coated silicon wafer and for both symmetric and asymmetric BCPs is demonstrated.