PHYS 712 |
| Catalyst-free vapor-solid nanowire growth, a newly described method for the production of nanowires compatible with a wide variety of semiconductor materials, has been used to produce novel multiphase zinc-blende/wurtzite gallium nitride nanowires. Multiphase nanowire growth occurred at nanoscale nucleation sites on platelets of gallium nitride. Evidence supports a mechanism where gallium is sourced via a kinetic equilibrium of platelet growth and decomposition, which leads to nanoscale nucleation sites. It is also known that NH3 can undergo a barrierless chemisorption on GaN, leaving NH2 and H with nitrogen incorporation occurring at step edges. Growth temperature has been shown to exert a strong influence on nucleation site formation. Multiphase GaN nanowires may have novel properties that augment and may be superior to single-phase nanowires in device applications. 2-point and 4-point probe current-voltage characterizations were carried in a special nanoprobing system with direct SEM visualization. Evidence for single-phase current transport within the multiphase nanowire structure is discussed. |
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Nanostructured Materials
1:20 PM-5:00 PM, Thursday, April 10, 2008 Morial Convention Center -- Rm. 338, Oral
Division of Physical Chemistry |