Schottky contacts at chemically modified Si(111)

INOR 96

Stephen Maldonado, stephen.maldonado@gmail.com, Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes, Pasadena, CA 91125 and Nathan S. Lewis, nslewis@its.caltech.edu, Chemistry & Chemical Engineering, Caltech, 1200 E. California Blvd., Pasadena, CA 91125.
The electronic properties of metal-silicon junctions are highly dependent upon preparation method. In this presentation, we demonstrate that n-Si(111) surfaces modified via a two-step chlorination/alkylation process yield predictable and superior interfacial properties as compared to freshly etched Si(111). Standard (dark and light) current-voltage, differential capacitance-voltage, and photoemission analyses demonstrate a consistently higher barrier heights at alkylated Si(111)
 

Inorganic Materials: Applications to Environmental and Energy Research
1:30 PM-5:30 PM, Sunday, August 19, 2007 BCEC -- 203, Oral

Division of Inorganic Chemistry

The 234th ACS National Meeting, Boston, MA, August 19-23, 2007