Materials for patterned porous films

PMSE 253

Burcin Erenturk and Kenneth R. Carter, Department of Polymer Science and Engineering, University of Massachusetts, 416 Conte Building, 120 Governors Drive, Amherst, MA 01003
Advanced microelectronic chips rely on complex metal interconnect structures which facilitate internal communication between the millions of individual devices comprising the chip. We have explored new materials and processes for creating this complex interconnect structure especially the low dielectric constant (k) insulating material. We utilize dielectric precursors, such as low molecular weight, chain extendible polymethylsilsesquioxanes (PMSSQ) SOG in an imprint patterning process. These materials can be partially cured while in contact with an imprint mold then heated to affect complete cure, yielding patterned dielectric layers. Ultra-low k patterned layers are available by taking advantage of the porogen templating approach. We have successfully imprinted into porogen-containing PMMSQ SOG and thermally decomposed the porogen to yield patterned low k layers. In this report we discuss the material synthesis especially the aliphatic polyester-based porogens and the nanocontact molding imprint process developed to fabricate these patterned low k layers.

Joint PMSE/POLY Poster Session
6:00 PM-8:00 PM, Tuesday, August 21, 2007 BCEC -- Exhibit Hall - B2, Poster

8:00 PM-10:00 PM, Monday, August 20, 2007 BCEC -- Exhibit Hall - B2, Sci-Mix

Division of Polymeric Materials: Science & Engineering

The 234th ACS National Meeting, Boston, MA, August 19-23, 2007