Novel photoanode architectures and tunneling barriers

FUEL 266

Thomas W. Hamann, t-hamann@northwestern.edu1, Alex B. F. Martinson, a-martinson2@northwestern.edu2, Jeffrey W. Elam, jelam@anl.gov3, Michael J. Pellin, pellin@anl.gov4, and Joseph T. Hupp, j-hupp@northwestern.edu1. (1) Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, (2) Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113, (3) Energy Systems Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, (4) Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439
Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.
 

Photovoltaic Solar Cells for Energy Applications: Nanomaterials for PV Applications
9:00 AM-12:15 PM, Thursday, August 23, 2007 Boston Park Plaza -- Cambridge Rm, Oral

Division of Fuel Chemistry

The 234th ACS National Meeting, Boston, MA, August 19-23, 2007