INOR 238 |
| The pyrolysis of [Cl2Ga{NH(SiMe3)}]2 resulted in the formation of cubic/hexagonal GaN at 550–650 °C and polycrystalline GaN above 650 °C.1 The elimination of Me3SiCl takes place at low temperature, however, elimination of HCl to yield GaN, requires elevated temperatures (> 650 °C). Subsequent pyrolysis studies of [Cl2Ga{NH(SiMe3)}]2 have been investigated under controlled conditions. Initial results suggests that [ClGaNH]n was obtained under inert conditions (N2, vacuum) at 500 °C, as shown by the X-ray powder diffraction patterns. Thermal decomposition of the compound [ClGaNH]n has been studied under various conditions, such as temperature and pressure. Gallium and indium alkoxides, of the type [RM(OR')2]n (M = Ga, In, R = Me, Et, R' = CH2CH2OMe, CH2CH2NMe2), have been synthesised via a number of routes. The reaction of R3M and excess R'OH, under reflux, resulted in mixtures of mono and bis(alkoxides). To overcome the formation of mixtures, synthetic routes to gallium and indium bis(alkoxides) have been developed, which involve the reaction of [RM(NR”2)2]n (R” = Me, SiMe3) with two equivalents of alcohol (R'OH). The thermal decomposition of all compounds has been studied using thermal gravimetric analysis. 1 Carmalt, C.J.; Mileham, J.D.; White, A.J.P.; Williams, D.J. Dalton Trans. 2003, 4255–4260. |
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Main Group Chemistry
7:00 PM-10:00 PM, Sunday, August 19, 2007 BCEC -- Exhibit Hall - B2, Poster
Division of Inorganic Chemistry |