INOR 63 |
| Controlled growth of CuIn1-xGaxS2 (0 ≤ x ≤ 1) nanoparticle alloys has been performed using mixtures of single source precursors of the general formula of (R3P)2CuM(SR')4 (M = In, Ga) as the starting material. High yield synthesis of various nanoparticle sizes was achieved using microwave irradiation methods developed in our laboratory by applying α,ω-dithiols as surface capping groups. Characterization of the particles by SEM, and HR-TEM indicates that the material consists of small crystalline particles which cluster into larger aggregates resulting in extensive three dimensional networking. SAED measurements show broad diffraction lines consistent with small crystalline particles. These materials were also investigated by XRD indicating a tetragonal phase consistent with chalcopyrite. Judicial selection of reaction conditions allow systematic variation of nanoparticle sizes as supported by XRD diffraction line widths sharpening with increasing particle diameters. XPS and EDS data confirms the presence of a 1/1 ratio of Cu/(In+Ga) additionally the ratio of indium to gallium in the alloys can be controlled in a regular fashion. The application of these nanoparticles as efficient, and inexpensive absorbers for photovoltaic applications will also be discussed.
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Nanoscience: Synthesis and Characterization
8:30 AM-12:10 PM, Sunday, August 19, 2007 BCEC -- 209, Oral
Division of Inorganic Chemistry |