INOR 310 |
| Reactions of metal complexes with water have been used in the formation of metal oxide thin films as new high-dielectric constant, gate insulating materials in the new generations of microelectronic devices. When Ta(NMe2)4Cl is exposed to H2O, elimination of HNMe2 has been observed, yielding dimeric (Me2N)3(Cl)Ta(µ-O)Ta(Cl)(NMe2)3. Our studies of the reaction and characterization of the products will be reported. |
|
Synthetic Coordination Chemistry
7:00 PM-10:00 PM, Sunday, August 19, 2007 BCEC -- Exhibit Hall - B2, Poster
Division of Inorganic Chemistry |