POLY 564 |
| Defect-free sub-10 nm silicon nanodisk (a nanometer-sized disk-shaped silicon structure on a very thin SiO2 layer with a diameter of 10 nm or less and an Si thickness of 1-2 nm) structures were fabricated by using a damage-free Cl NB etching process with a selectively arranged ferritin iron core mask. A STEM-EELS observation demonstrated that the poly-Si nanodisk sandwiched between thin Si oxide layers was successfully fabricated. The Coulomb staircase effect in I-V measurements of the nanodisk structure could be clearly observed even at room temperature. The nanodisks fabricated in this study are highly reproducible and are promising as quantum structures for use in nanoelectronic devices such as single electron transistors at room temperature. |
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Synthetic and Biological Macromolecules for Emerging Nanotechnologies
1:30 PM-5:10 PM, Wednesday, August 22, 2007 Westin Boston Waterfront -- Grand Ballroom A, Oral
Division of Polymer Chemistry |