Low-voltage organic and organic-inorganic hybrid electronics enabled by ultrathin siloxane-based self-assembled molecular layers and cross-linked polymers as gate dielectrics

INOR 80

Myung-Han Yoon, mhyoon@fas.harvard.edu1, Antonio Facchetti, a-facchetti@northwestern.edu2, He Yan, hyan@polyera.com2, and Tobin J. Marks, t-marks@northwestern.edu2. (1) Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138, (2) Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Northwestern U, Evanston, IL 60208
Many scientists have been actively searching for the nanoscopic gate dielectric materials necessary to realize low-voltage organic and organic-inorganic hybrid electronics. To be viable for use, particularly in flexible and/or transparent electronics, dielectrics must display the following characteristics: excellent electrical insulation, optically transparency, low-temperature processibility, and compatibility with diverse semiconducting materials and substrates. In this presentation, we report on two novel high-performance dielectric materials: 1) self-assembled molecular nano-dielectrics (SANDs) and 2) spin-on cross-linked polymer blends (CPBs). In addition to satisfying the aforementioned requirements, these two dielectric materials exhibit high areal capacitances (200 – 700 nF/cm2) and very low gate leakage current densities (10-7 – 10-8 A/cm2) at the nanometer-range thickness (3 – 20 nm). Furthermore, we demonstrate the successful incorporation of these dielectrics into low-voltage thin-film transistors with various types of semiconducting materials including organic semiconductors, carbon nanotubes, nanowires, and transparent inorganic semiconductors.
 

Young Investigator Symposium
1:30 PM-5:30 PM, Sunday, August 19, 2007 BCEC -- 206 A/B, Oral

Division of Inorganic Chemistry

The 234th ACS National Meeting, Boston, MA, August 19-23, 2007