INOR 742 |
| It is of great interest recently to develop new germanium precursors for low temperature ALD or CVD of Ge2Sb2Te5 chalcogenide thin films for non-volatile Phase Change Memory (PCM). We have developed a series of novel germanium precursors specifically for low temperature deposition applications. These compounds are based on the 2,5 –diaza–1-germacyclopentane structural motif. The Ge complexes have been synthesized in high purity and characterized using various spectroscopic methods. The thermal behavior of these complexes has been studied using simultaneous thermal analysis (STA) and will be shown here. We will also present the results of low temperature CVD growth of thin films using these novel germanium precursors. |
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Thin Films: Chemical Vapor Deposition and Atomic Layer Deposition
7:00 PM-10:00 PM, Tuesday, August 21, 2007 BCEC -- Exhibit Hall - B2, Poster
Division of Inorganic Chemistry |