INOR 349 |
| The need for new materials and processes to facilitate future applications of microelectronics has created a challenging opportunity. In this regard, we have developed new chemical precursors and processes specifically designed for ALD of copper metal. A series of copper(I) compounds has been prepared that show significant promise as precursors for depositing thin films of copper metal. These compounds generate copper film at temperatures as low as 45 oC in an ALD process. A volatile organic molecule adsorbed to the substrate surface prior to the introduction of the copper precursor is used to limit the chemisorption of precursor to the substrate surface. Conformal films with little contamination from ligands are produced in this process. Details of the deposition conditions and analytical data on the films are presented. |
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Thin Films: Chemical Vapor Deposition and Atomic Layer Deposition
8:30 AM-12:10 PM, Monday, August 20, 2007 BCEC -- 258C, Oral
Division of Inorganic Chemistry |