Defect control of shrink materials for 248nm wavelength lithography

POLY 148

Joon Seok Oh, joonseok.oh@samsung.com, Juyoung Kim, Jae Hyun Kim, Young Ho Kim, and Tae Sung Kim. Material engineering group, Menufacturing Technology Team 1, Memory Division, Samsung electronics, San #16 Banwol-dong, Hwasung-City, 445-701, South Korea
Shrink material is one of the most powerful method to pattern small contact hole. Merits of shrink material are that very simple process is required and the degree of shrinkage is constant through pitch. However, Shrink process has its application limitation as a shrink material due to defect problem. The smaller the pattern size becomes, the larger the number of defect gets. Most of defects generally come from intermixing and crosslinking process and some of them are particles from polymer insolubility to solvent (water and alcohol). In order to solve defect issue, not only materials including polymer and all type of additives such as amine and surfactants but also process conditions must be optimized. In this poster, how to reduce the number of defect has been shown by changing polymer, additives and optimizing process conditions with 248 nm lithography in sub-80 nm contact hole.