Investigation of SH radical during the diamond thin film deposition in the HFCVD by means of CRDS

PHYS 349

Madalina Buzaianu, bmdora@gmail.com1, Vladimir Makarov, makarov@adam.uprr.pr2, Brad R. Weiner, brad@adam.uprr.pr3, and Gerardo Morell, gmorell@rrpac.upr.clu.edu1. (1) Department of Physics, University of Puerto Rico, Rio Puedras PO Box 23343, Facundo Bueso 146, San Juan, PR 00931, (2) Departmen of Chemistry, University of Puerto Rico, PO Box 23346, San Juan, PR 00931-3346, (3) Department of Chemistry, University of Puerto Rico, P.O. Box 23346, University Station, San Juan, PR 00931
The SH radical formation mechanism was studied by Cavity Ringdown Spectroscopy (CRDS) during the HFCVD of the diamond thin film for the CH4/H2/H2S mixture. The evolution of the absorption spectrum of the SH radical was studied as a function of different experimental parameters (different filament materialas, distance between filament and laser probing area of CRD cell, concentrations of CH4 and H2S, presence/absence of substrate). The gas temperature and the SH concentration dependence of distance function were obtained. The SH concentration profile as a function of distance changes significantly in the presence of the substrate. The character of the dependences of the SH radical yield on the CH4 concentration varies depending on the presence/absense of the substrate. Analysis of the experimental data leads to a partial understanding of the mechanism of the SH radical formation during the HFCVD of the diamond thin film.
 

Physical Chemistry Poster Session
7:00 PM-9:00 PM, Wednesday, August 22, 2007 BCEC -- Exhibit Hall - B2, Poster

Division of Physical Chemistry

The 234th ACS National Meeting, Boston, MA, August 19-23, 2007