Cyclopentadienylgallium azo derivatives: Potential GaN precursors?

INOR 37

Philippe Perrotin, perr0228@uidaho.edu1, Pamela J. Shapiro, shapiro@uidaho.edu1, and Brendan Twamley2. (1) Department of Chemistry, University of Idaho, P.O. Box 442343, Moscow, ID 83844-2343, (2) University Research Office, University of Idaho, P.O. Box 443010, Moscow, ID 83844
GaN is being used increasingly in a variety of optoelectronic and electronic devices such as blue/UV LEDs, blue laser diodes, and high temperature/high power transistors. GaN films and nanostructures are commonly formed by high temperature gas phase methods. The solid state and solvothermal routes to GaN nanoparticles that have been reported to date do not offer sufficient control over the size and morphology of the particles for practical use toward special devices. We plan to exploit the labile nature of cyclopentadienyl-gallium bonds in the development of low temperature precursors to nanostructural GaN. For this purpose we have developed a variety of cyclopentadienyl, pentamethylcyclopentadienyl, and ansa-bis(cyclopentadienyl)gallium compounds containing amido, azido, and hydrazido ligands. Details concerning the structures, reactivity, and thermal and photochemical decomposition of these compounds will be presented.
 

Main Group
9:00 AM-11:20 AM, Sunday, 10 September 2006 Moscone Center -- Room 307, Oral

Division of Inorganic Chemistry

The 232nd ACS National Meeting, San Francisco, CA, September 10-14, 2006