POLY 549 |
| In order to deposit thin SiOx film with both oxygen and water vapor gas barrier properties, mixtures of tetramethoxysilane and oxygen were plasma-polymerized, and deposited on poly(ethylene naphthalate), PEN, film surfaces. In this study, we have investigated effects of ion assisted plasma on the performance of gas barrier properties for SiOx thin films deposited on PEN film surfaces. The SiOx deposition on the PEN films led to great decreases in oxygen permeation rate from 15.1 to 0.45 – 0.08 cm3/m2-day-atm at 30ºC at 90%RH. The SiOx deposition under ion assisted plasma was more advantageous to improving the gas barrier properties. The SiOx deposition on PEN films led to decrease in water vapor permeation rate. The water vapor permeation rate was 0.244 – 0.276 g/m2-day at 40ºC at 90%RH. |
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Silicones and Silicone-Modified Materials
6:00 PM-8:00 PM, Tuesday, 12 September 2006 Moscone Center -- Hall D, Poster
Division of Polymer Chemistry |