Preparation of B/C/N thin films on Ni(111) and Cu(111) single crystal substrates by LPCVD method

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Yusuke Nakagawa, m05117@mail.osakac.ac.jp1, Masayuki Kawaguchi, kawaguti@isc.osakac.ac.jp2, and Shinya Kuroda1. (1) Graduate School of Engineering, Osaka Electro-Communication University, 18-8 Hatsu-Cho, Neyagawa, 572-8530, Japan, (2) Department of Applied Chemistry, Osaka Electro-Communication University, 18-8 Hatsu-Cho, Neyagawa, 572-8530, Japan
Thin films of crystalline B/C/N materials have been deposited on Ni(111) and Cu(111) single crystal substrates by low pressure chemical vapor deposition method (LPCVD method) using acrylonitrile and boron trichloride (mole ratio = 2 : 1) as starting materials at the temperature of 1120K under the pressure of 1000 Pa. RHEED observation indicates that obtained B/C/N thin films were highly oriented and crystalline with d-spacings of 0.107, 0.124 and 0.214nm, which are values similar to those of graphite (0.106, 0.123 and 0.213nm). ESCA study indicates that the compositions of thin films obtained on Ni(111) and Cu(111) were B : C : N = 4.8 : 1.0 : 4.0, and 0.72 : 1.0 : 0.36, respectively. The interaction between the substrate and the components (B, C, N) resulted in the formation of films having different compositions.