ANYL 41 |
| The compound Sn-Se was prepared on p-Si(100) wafer by electrochemical atomic layer epitaxy under the condition of illumination. The cyclic voltammetry results indicated that the light could catalyze the deposition reaction. X-ray diffraction patterns indicate the growth of Sn-Se layers with (400) as the preferred orientation. The obtained microstructures were analyzed by scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy . The X-ray diffraction data were shown in Fig. 1. Fig.1 X-ray diffraction patterns of SnSe film on silicon wafer
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General Papers
7:00 PM-9:00 PM, Sunday, 10 September 2006 Moscone Center -- Hall D, Poster
Division of Analytical Chemistry |
