Development of a tunable microwave frequency alternating current scanning tunneling microscope to profile dopant density in semiconductors

ANYL 86

Amanda M. Moore, amm420@psu.edu1, Brent A. Mantooth, bmantooth@psu.edu2, and Paul S. Weiss, stm@psu.edu1. (1) Departments of Chemistry and Physics, The Pennsylvania State University, 104 Davey Laboratory, University Park, PA 16802, (2) Research and Development Center, Geo-Centers, PW2 - Rm 166, 10900 University Blvd., Manassas, VA 20110
We have built a scanning tunneling microscope (STM) capable of profiling dopants in semiconductor devices and test structures at sub-nanometer resolution. The alternating current signals, and thereby the dopant density and type, are obtained through a heterodyned signal. Two frequencies are applied to the STM tip and the nonlinearity of the tunnel junction mixes the frequencies, generating new signals including at the difference of the frequencies applied; this in combination with the DC bias yields information on the dopant density and type. This ultrahigh resolution (<1 nm) profiling tool enhances what is obtained through current metrology tools and will support semiconductor processing as the size scale of devices continues to decrease.
 

General Papers
7:00 PM-9:00 PM, Sunday, 28 August 2005 Washington DC Convention Center -- Hall A, Poster

Sci-Mix
8:00 PM-10:00 PM, Monday, 29 August 2005 Washington DC Convention Center -- Hall A, Sci-Mix

Division of Analytical Chemistry

The 230th ACS National Meeting, in Washington, DC, Aug 28-Sept 1, 2005