Adsorption and decomposition of Benzoic acid on Si(111)

COLL 189

Eun Kyung Hwang, Yun Jeong Hwang, and Sehun Kim. Department of Chemistry, KAIST, 373-1 Guseong-dong Yuseong-gu, Daejeon, 305-701, South Korea
Organic functionalization of the Si substrate is an important step for the development of new semiconductor- based materials and devices. We have studied the adsorption and decomposition of Benzoic acid on Si(111) surface using Low Energy Electron Diffraction, Auger Electron Spectroscopy, Temperature Programmed Desorption, Scanning Tunneling Microscopy and ab initio calculations. In this conference, we will present the atomic level adsorption structure and the decomposition mechanism of benzoic acid on Si(111). Benzoic acid is partially dissociated to form the benzoate and H adatom on Si(111). The decomposition temperature of the benzoate on Si(111) is 1000K