IEC 42 |
| Shinya Aoki, Tazumi Nagasawa, and Rumiko Hayase. Advanced Materials and Devices Laboratory, Corporate R & D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan |
| Thin-film field-effect transistors based on molecular crystals or p-conjugated polymers have attracted much interest because of their potential applications in low-cost or large-area electronics. Performance similar to amorphous silicon devices has been realized with pentacene-based transistors with long channel length >10mm. However, as for short channel devices (L<5mm) suitable for practical applications such as active-matrix displays or ICs, the device performance was still low. We will present recent work on the improvement of performance of small-molecule-based transistors, including optimization of metal/organic interface and control of thin-film morphology. Fabrication of circuits will also be presented. |
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General Papers in Advanced Materials and Nanotechnology (sponsored by Advanced Materials & Nanotechnology Subdivision)
1:30 PM-5:24 PM, Sunday, March 23, 2003 Convention Center -- Room 394, Oral
Division of Industrial and Engineering Chemistry |